BC857W,135 PNP Bipolar Transistor: Ultimate Guide to Nexperia's High-Performance SMD Solution

The BC857W,135 from Nexperia USA Inc. is a premium PNP bipolar junction transistor (BJT) designed for modern electronics. As part of Nexperia's renowned discrete semiconductor portfolio, this transistor combines reliability with cutting-edge performance in a compact SOT-323 (SC-70) surface-mount package. Engineers worldwide trust the BC857W,135 for its exceptional current handling, voltage tolerance, and switching capabilities.

In-Depth Technical Specifications

Electrical Characteristics

• Current Ratings: 100mA continuous collector current (Ic) with 200mW total power dissipation
• Voltage Performance: 45V collector-emitter voltage (Vceo) with just 600mV saturation voltage
• Gain Parameters: Minimum DC current gain (hFE) of 125 at 2mA/5V
• Frequency Response: 100MHz transition frequency (fT) for high-speed applications
• Leakage Current: Ultra-low 15nA collector cutoff current (ICBO)

Thermal and Mechanical Properties

• Operating temperature range up to 150 C junction temperature
• Compact SOT-323 (SC-70) package dimensions: 2.0 1.25 0.9mm
• Moisture Sensitivity Level (MSL): 1 (unlimited floor life)

Why Choose BC857W,135? Key Advantages

1. Space-Efficient Design

The SOT-323 package makes the BC857W,135 ideal for space-constrained applications like:

• Wearable electronics
• IoT devices
• Mobile phone circuits
• High-density PCBs

2. Energy-Efficient Operation

With its low saturation voltage (600mV) and minimal leakage current (15nA), this transistor excels in:

• Battery-powered devices
• Energy harvesting systems
• Power management circuits

3. Robust Performance

The 45V Vceo rating and 150 C temperature tolerance ensure reliability in demanding environments:

• Automotive electronics
• Industrial control systems
• Outdoor equipment

Comprehensive Application Guide

Switching Circuits

The BC857W,135 is perfect for:

• LED drivers (up to 100mA current)
• Relay control circuits
• Digital logic interfaces
• Load switching in portable devices

Amplification Applications

Excellent for signal conditioning in:

• Audio preamplifiers
• Sensor signal chains
• RF front-end circuits
• Impedance matching networks

Specialized Uses

• Push-pull amplifier configurations
• Current mirror circuits
• Voltage regulators
• Oscillator designs

Design Considerations

Thermal Management

While the BC857W,135 has excellent thermal characteristics:

• Use proper PCB copper area for heat dissipation
• Avoid continuous operation at maximum ratings
• Consider thermal vias in high-power applications

Circuit Protection

Recommended design practices:

• Implement current-limiting resistors
• Use flyback diodes for inductive loads
• Consider ESD protection in sensitive applications

Comparative Analysis

BC857W,135 vs. Similar Transistors

Parameter	BC857W,135	Competitor A	Competitor B
Package	SOT-323	SOT-23	SC-70
Vceo	45V	30V	50V
Ic	100mA	500mA	100mA
hFE	125-800	100-300	150-600
Price	$$	$$$	$$

Purchasing Information

The BC857W,135 is available through authorized distributors worldwide. Typical lead times are 8-12 weeks for production quantities. Evaluation samples can be requested directly from Nexperia's website.

Conclusion

The BC857W,135 PNP bipolar transistor represents the perfect balance of performance, size, and cost for modern electronic designs. Its combination of 100mA current handling, 45V voltage rating, and compact SOT-323 package makes it exceptionally versatile for both consumer and industrial applications. Whether you're designing portable devices, automotive systems, or industrial controls, the BC857W,135 delivers reliable performance backed by Nexperia's quality assurance.

For datasheets, application notes, or purchasing information, visit our product page or contact our technical support team. We offer comprehensive resources to help you successfully integrate the BC857W,135 into your next design project.