C3M0065090D: High-Performance 900V SiC N-Channel MOSFET by Wolfspeed | Features & Applications
C3M0065090D: Wolfspeed's 900V SiC N-Channel MOSFET for High-Efficiency Power Systems
The C3M0065090D from Wolfspeed represents the pinnacle of Silicon Carbide (SiC) power transistor technology, delivering unmatched performance for demanding applications. This comprehensive guide explores its technical specifications, advantages over silicon MOSFETs, and real-world implementations to help engineers optimize their designs.
Why Silicon Carbide? The Next Generation of Power Electronics
SiC MOSFETs like the C3M0065090D offer three key advantages over traditional silicon:
- 10x Higher Breakdown Field Strength enabling thinner drift layers
- 3x Higher Thermal Conductivity for better heat dissipation
- Wider Bandgap (3.26eV vs 1.12eV) allowing operation at extreme temperatures
Detailed Technical Specifications
| Parameter | Value | Benefit |
|---|---|---|
| Vdss | 900V | Handles industrial bus voltages (480VAC systems) |
| Id (25 C) | 36A | Supports 10kW+ power stages in parallel configurations |
| Rds(on) | 78m @ 15V | Reduces conduction losses by 60% vs comparable Si MOSFETs |
| Qg | 30.4nC | Enables 100kHz+ switching frequencies |
| Package | TO-247-3 | Industry-standard footprint with 0.5 C/W thermal resistance |
Switching Performance Analysis
Benchmark tests show the C3M0065090D achieves:
- Turn-on delay: 12ns typical @ 400V/20A
- Turn-off delay: 18ns typical
- Reverse recovery time: <50ns (vs 150ns for Si superjunction MOSFETs)
Application-Specific Design Considerations
1. Solar Inverters
When used in 3-phase string inverters:
- Enables >99% peak efficiency
- Reduces heatsink size by 40% compared to IGBT solutions
- Allows 50% higher switching frequency for smaller magnetics
2. EV Charging Stations
In 22kW AC chargers:
- Enables bidirectional power flow for V2G applications
- Maintains <70 C junction temperature at full load
- Passes automotive-grade reliability testing (AEC-Q101)
Thermal Management Guidelines
To maximize reliability:
- Use thermal interface materials with >3W/mK conductivity
- Maintain <125 C case temperature for 100,000hr MTBF
- Implement active cooling for ambient temperatures >85 C
Comparative Analysis: C3M0065090D vs Competitors
When compared to similar 900V SiC MOSFETs:
- 30% lower Qrr than STMicroelectronics SCTW90N65G2V
- 15% better Rds(on) vs temp coefficient vs Infineon IMZ120R090M1
- Industry-leading Vgs(th) stability across temperature range
Purchasing and Support Information
Our authorized Wolfspeed distribution channel provides:
- Genuine components with full traceability
- Volume pricing for production quantities
- Access to Wolfspeed's SpeedFit 2.0 simulation models
- Technical support from SiC application specialists
For design-in assistance or samples, contact our engineering team today. Explore how the C3M0065090D can revolutionize your power electronics design while meeting your cost and performance targets.