CY15B104Q-SXIT: The Ultimate 4Mb FRAM Memory IC for High-Reliability Applications

The CY15B104Q-SXIT from Infineon Technologies represents the pinnacle of non-volatile memory technology, combining the speed of SRAM with the persistence of flash memory. This 4Mb (512K x 8) Ferroelectric RAM (FRAM) solution is engineered for mission-critical applications where data integrity, fast write speeds, and unlimited endurance are paramount.

Unparalleled Technical Specifications

1. Revolutionary FRAM Technology

• Unlike conventional flash memory that suffers from write endurance limitations (typically 100,000 cycles), the CY15B104Q-SXIT offers virtually unlimited read/write cycles (10^14) - perfect for applications requiring frequent data logging
• Data retention of 10+ years at 85 C without power, outperforming standard EEPROM and NOR Flash solutions
• Near-instantaneous write operations (150ns) with no erase-before-write requirement, enabling true real-time data capture

2. Superior Performance Metrics

• Blazing-fast 40MHz SPI interface (Mode 0 and 3 supported) with throughput up to 40Mbps
• Advanced quad-SPI (QSPI) support for bandwidth-intensive applications
• Ultra-low active current of 1.5mA (typical at 40MHz) and standby current of 150 A (max)

3. Robust Industrial Design

• Wide voltage range operation (2.0V to 3.6V) with full functionality maintained across entire range
• Industrial temperature range (-40 C to +85 C) ensures reliable operation in harsh environments
• 8-pin SOIC package with compact 5.3mm width enables high-density PCB layouts

Advanced Applications Across Industries

1. Industrial 4.0 Solutions

• Predictive maintenance systems requiring continuous equipment monitoring data storage
• PLC program storage with instant updates and failsafe operation
• Robotics position and calibration data retention during power cycles

2. Automotive Electronics

• Event data recorders (EDRs) for crash reconstruction
• ADAS sensor data buffering with zero latency writes
• Infotainment system user preferences storage

3. IoT and Edge Computing

• Energy harvesting sensor nodes requiring low-power non-volatile memory
• Smart meter data logging with frequent writes
• Wearable health monitors storing biometric data

4. Medical Devices

• Patient monitoring equipment maintaining critical data through power interruptions
• Surgical instrument configuration storage
• Implantable device data recording

Competitive Advantages

• 10,000x faster writes compared to standard EEPROM
• 1,000,000x better endurance than conventional flash memory
• Zero write delay unlike flash memory that requires erase cycles
• Lower total system power due to fast write completion
• Radiation-resistant cell structure suitable for aerospace applications

Design Integration Support

Infineon provides comprehensive development resources for the CY15B104Q-SXIT including:

• Reference designs for common applications
• SPI interface implementation guides
• PCB layout recommendations for optimal signal integrity
• Evaluation kits for rapid prototyping
• Detailed application notes for power optimization

Why Engineers Choose CY15B104Q-SXIT

"In our smart grid monitoring systems, we replaced EEPROM with CY15B104Q-SXIT and achieved 100x improvement in data logging frequency while reducing power consumption by 30%." - Senior Design Engineer, Power Systems Inc.

"The infinite endurance of FRAM solved our automotive telematics data corruption issues during frequent power cycles." - Automotive Systems Architect

Purchasing Information

The CY15B104Q-SXIT is available in tape-and-reel packaging for high-volume production. Sample quantities can be ordered directly from authorized distributors. Contact our technical sales team for volume pricing and lead time information.

For design engineers requiring higher density options, Infineon offers the CY15B108Q (8Mb) and CY15V104Q (4Mb with wider voltage range) in the same product family.

Upgrade your system's memory performance today with the industry-leading CY15B104Q-SXIT FRAM solution from Infineon Technologies - where reliability meets cutting-edge non-volatile memory technology.