IRFP064 N-Channel MOSFET: High-Performance Power Transistor by Vishay Siliconix

The IRFP064 from Vishay Siliconix is a premium N-Channel MOSFET engineered for demanding power applications. With its exceptional 60V drain-source voltage rating and 70A continuous current capacity, this MOSFET stands out as a reliable solution for high-power designs across industries.

Comprehensive Technical Specifications

Manufacturer and Product Details

• Manufacturer: Vishay Siliconix (Industry leader in power semiconductors)
• Part Number: IRFP064
• Package: TO-247AC (Through-hole mounting)
• Status: Obsolete but still widely available

Electrical Characteristics

• FET Type: N-Channel Enhancement Mode
• Technology: Advanced MOSFET (Metal-Oxide-Semiconductor)
• Voltage Rating: 60V Drain-to-Source (Vdss)
• Current Capacity: 70A continuous at 25 C (110A pulsed)
• On-Resistance: Ultra-low 9m typical at 10V Vgs
• Gate Threshold: 2-4V (Vgs(th))

Switching Performance

• Gate Charge: 190nC (Qg) for fast switching
• Input Capacitance: 7400pF (Ciss)
• Turn-On Delay: 18ns typical
• Rise Time: 60ns typical

Thermal Management

• Power Dissipation: 300W with proper heatsinking
• Junction Temperature: -55 C to +175 C operation range
• Thermal Resistance: 0.42 C/W junction-to-case

Why Choose the IRFP064 MOSFET?

Superior Power Handling

The IRFP064 combines high voltage and current ratings with remarkably low conduction losses, making it ideal for:

• Switch-mode power supplies (SMPS)
• DC-DC converters
• Motor drive circuits
• Class D audio amplifiers
• Industrial power controllers

Enhanced Efficiency

With its low Rds(on) of just 9m , the IRFP064 minimizes power loss and heat generation, significantly improving system efficiency compared to standard MOSFETs.

Robust Construction

The TO-247AC package provides excellent thermal performance and mechanical durability, ensuring reliable operation in harsh environments.

Design Considerations

Gate Driving Requirements

For optimal performance:

• Use 10V gate drive for minimum Rds(on)
• Implement proper gate drive circuitry to achieve fast switching
• Consider using a gate driver IC for high-frequency applications

Thermal Management

Recommended practices:

• Use appropriate heatsinking (thermal pad recommended)
• Maintain junction temperature below 150 C for long-term reliability
• Consider forced air cooling for high-power applications

Alternative and Complementary Parts

For designers considering alternatives:

• Higher Voltage: IRFP260 (200V), IRFP460 (500V)
• Lower Rds(on): IRFP250N (8m )
• Similar Specs: IRFP064N (newer version)

Frequently Asked Questions

Q: Is the IRFP064 still available for purchase?

A: While marked obsolete, many distributors still carry stock of this popular MOSFET.

Q: What's the difference between IRFP064 and IRFP064N?

A: The IRFP064N features slightly improved specifications and is the recommended replacement.

Q: Can I use this MOSFET for automotive applications?

A: Yes, but verify it meets your specific automotive standards and requirements.

Conclusion

The IRFP064 remains a top choice for engineers needing a robust, high-current N-Channel MOSFET. Its combination of low on-resistance, high power handling, and reliable TO-247AC packaging makes it suitable for demanding power electronics applications. When designing with this component, pay special attention to proper gate driving and thermal management to achieve optimal performance.

For current availability and pricing information, please contact our sales team. We offer genuine Vishay components with full traceability and technical support.