SQ1563AEH-T1_GE3: High-Performance Dual N/P-Channel MOSFET by Vishay Siliconix
SQ1563AEH-T1_GE3: High-Performance Dual N/P-Channel MOSFET by Vishay Siliconix
The SQ1563AEH-T1_GE3 is a state-of-the-art dual-channel MOSFET from Vishay Siliconix, a global leader in semiconductor innovation. This advanced MOSFET array combines N-channel and P-channel transistors in a single compact package, delivering exceptional efficiency and reliability for modern electronic designs.
Comprehensive Product Overview
Manufacturer and Technical Specifications
Manufactured by Vishay Siliconix, the SQ1563AEH-T1_GE3 falls under the Discrete Semiconductor Products category, specifically Transistors - FETs, MOSFETs - Arrays. Its cutting-edge design features:
- Dual N/P-Channel Configuration: Enables flexible circuit design with complementary switching capabilities
- PowerPAK SC-70-6 Dual Package: Ultra-compact 1.2mm x 2.0mm footprint with superior thermal performance
- Advanced Silicon Technology: Delivers industry-leading efficiency and switching characteristics
Detailed Technical Specifications
Electrical Performance
- Voltage Ratings:
- Drain-to-Source Voltage (Vdss): 20V for both channels
- Gate-to-Source Voltage (Vgs): 8V maximum
- Current Handling:
- Continuous Drain Current (Id): 850mA (N-channel), 800mA (P-channel)
- Pulsed Drain Current: 3.5A (N-channel), 3.2A (P-channel)
- Efficiency Parameters:
- Rds(On) N-Channel: 280m @ 4.5V, 850mA
- Rds(On) P-Channel: 575m @ 4.5V, 800mA
- Total Gate Charge (Qg): 1.25nC (N), 1.33nC (P) @ 4.5V
- Switching Characteristics:
- Input Capacitance (Ciss): 89pF (N), 84pF (P) @ 10V
- Output Capacitance (Coss): 31pF (N), 28pF (P) @ 10V
Thermal and Physical Properties
- Power Dissipation: 1.5W maximum
- Operating Temperature Range: -55 C to +175 C (TJ)
- Junction-to-Ambient Thermal Resistance: 833 C/W
- Lead-Free and RoHS Compliant: Meets environmental standards
Advanced Applications
The SQ1563AEH-T1_GE3's unique combination of features makes it ideal for:
Power Management Systems
- DC-DC converters and voltage regulators
- Load switching in portable devices
- Power distribution in IoT applications
Motor and Actuator Control
- Precision motor drivers for small robotics
- H-bridge configurations for bidirectional control
- Stepper motor driving circuits
Battery-Powered Applications
- Battery protection circuits
- Power path management in mobile devices
- Energy harvesting systems
Signal Processing
- Analog signal switching
- Data acquisition systems
- Multiplexing applications
Design Advantages
Space-Saving Integration
The dual-channel design in a single SC-70-6 package reduces PCB footprint by up to 50% compared to discrete solutions, critical for modern compact designs.
Enhanced Thermal Performance
The PowerPAK package features:
- Exposed thermal pad for improved heat dissipation
- Low thermal resistance for reliable operation
- Compatibility with automated optical inspection (AOI)
Reliability Features
- 100% avalanche tested
- Excellent ESD protection: 2kV HBM
- Qualified to AEC-Q101 standards for automotive applications
Comparative Advantages
When compared to similar MOSFET arrays, the SQ1563AEH-T1_GE3 offers:
Feature | SQ1563AEH-T1_GE3 | Competitor A | Competitor B |
---|---|---|---|
Rds(On) N-Channel | 280m | 350m | 400m |
Package Size | 1.2x2.0mm | 1.6x2.1mm | 1.8x2.5mm |
Max Junction Temp | 175 C | 150 C | 150 C |
Implementation Guidelines
PCB Layout Recommendations
- Use wide traces for power connections to minimize resistance
- Implement proper grounding for thermal pad
- Keep gate drive traces short to reduce inductance
Thermal Management
- For high current applications, use thermal vias under package
- Consider copper pour for additional heat dissipation
- Monitor junction temperature in continuous operation
Purchasing Information
The SQ1563AEH-T1_GE3 is available through authorized distributors worldwide. Typical delivery options include:
- Standard reel packaging (3000 units/reel)
- Sample quantities available
- Lead time: Typically 6-8 weeks for large orders
Conclusion
The SQ1563AEH-T1_GE3 represents the pinnacle of dual-channel MOSFET technology, combining Vishay Siliconix's expertise in power semiconductors with innovative packaging solutions. Its exceptional electrical characteristics, compact form factor, and robust reliability make it the ideal choice for designers working on space-constrained, high-efficiency applications across consumer electronics, automotive systems, and industrial controls.
For engineers seeking to optimize their power management designs, the SQ1563AEH-T1_GE3 delivers unparalleled performance in one of the industry's smallest dual MOSFET packages. Visit our authorized distributors today to request samples or place your order for this cutting-edge semiconductor solution.