STGWA25M120DF3: High-Performance 1200V IGBT by STMicroelectronics | Features & Applications
STGWA25M120DF3: STMicroelectronics' Premium 1200V IGBT for High-Power Applications
The STGWA25M120DF3 from STMicroelectronics represents the pinnacle of Insulated Gate Bipolar Transistor (IGBT) technology, combining cutting-edge trench field stop architecture with robust thermal performance. Designed for engineers demanding reliability in high-voltage environments, this 1200V/50A IGBT excels in industrial automation, renewable energy systems, and electric vehicle infrastructure. Below, we explore its technical superiority and real-world applications in detail.
In-Depth Technical Analysis
Breakthrough Electrical Performance
- Ultra-Low Conduction Losses: 2.3V Vce(on) at 25A reduces power dissipation by 15% compared to previous-generation IGBTs.
- High-Speed Switching: 28ns turn-on and 150ns turn-off times enable PWM frequencies up to 50kHz for precision motor control.
- Optimized Gate Drive: 85nC gate charge minimizes driver complexity while maintaining <1.3mJ switching energy losses.
Thermal Management Excellence
- TO-247-3 Package: Copper leadframe and 375W power dissipation capacity ensure stable operation at 175 C junction temperatures.
- Integrated Diode: Fast recovery (265ns trr) co-packaged diode reduces reverse recovery losses in bridge configurations.
Industry-Leading Applications
Renewable Energy Systems
In 3-phase solar inverters, the STGWA25M120DF3's 1200V rating allows direct DC-link connection without voltage doubling circuits, reducing BOM costs by 20%.
Electric Vehicle Infrastructure
EV fast chargers leverage its 100A pulsed current capability for compact 50kW modules with 98% efficiency ratings.
Industrial Automation
CNC machine servo drives benefit from the IGBT's 50A continuous current handling and <850 J switching energy for precise torque control.
Competitive Advantages
- Reliability: 10-year projected lifespan at 100,000 power cycles (ST qualification data)
- Design Flexibility: Compatible with 15V standard gate drivers and negative voltage turn-off
- Global Support: STMicroelectronics' worldwide distribution network ensures rapid prototyping samples
Engineering Resources
Access our free design toolkit including: - SPICE simulation models - Thermal impedance curves - PCB layout guidelines for EMI reduction - Failure mode analysis reports
Procurement Information
| Parameter | Value |
|---|---|
| MOQ | 100 units |
| Lead Time | 8 weeks |
| Packaging | Tube/50 pieces |
For volume pricing and automotive-grade options, contact our technical sales team today. The STGWA25M120DF3 is RoHS3 compliant and qualifies for AEC-Q101 testing upon request.