VS-10BQ100-M3/5BT: Premium 100V 1A Schottky Diode for Maximum Efficiency

The VS-10BQ100-M3/5BT from General Semiconductor - Diodes Division represents the pinnacle of Schottky diode technology, engineered to deliver exceptional performance in power conversion and rectification applications. This comprehensive guide explores why engineers worldwide trust this component for critical designs requiring high efficiency and reliability.

In-Depth Technical Specifications

Superior Electrical Performance

• Ultra-Low Forward Voltage: Just 750mV at 1A current significantly reduces power dissipation compared to standard diodes
• 100V Reverse Voltage: Robust protection against voltage spikes and transients
• Lightning-Fast Recovery: 500ns recovery time enables efficient high-frequency operation up to 1MHz
• Minimal Leakage: Only 500 A reverse leakage at maximum rated voltage
• Low Junction Capacitance: 65pF at 5V minimizes switching losses

Advanced Thermal Characteristics

• Wide Temperature Range: Operates flawlessly from -55 C to +150 C
• Optimized Thermal Design: SMB package provides excellent heat dissipation
• High Current Density: Compact footprint handles 1A continuous current

Industry-Leading Applications

Power Conversion Systems

The VS-10BQ100-M3/5BT excels in:

• Switch-mode power supplies (SMPS)
• DC-DC converter circuits
• Voltage clamping applications
• Synchronous rectification designs

Renewable Energy Solutions

Critical for:

• Solar panel bypass diodes
• MPPT charge controllers
• Wind turbine rectification
• Battery management systems

Automotive Electronics

Ideal for:

• Alternator rectification
• LED driver circuits
• ECU power supplies
• 12V/24V system protection

Competitive Advantages

Performance Benefits

• 15-20% higher efficiency than standard PN junction diodes
• 30% lower thermal resistance than comparable SMB packages
• 50% faster switching than conventional fast recovery diodes

Reliability Features

• 100% automated production testing
• MIL-STD-750 qualified manufacturing
• 5000-hour MTBF at rated conditions

Design Considerations

PCB Layout Recommendations

• Maintain 0.5mm clearance for 100V operation
• Use 2oz copper for optimal thermal performance
• Include thermal relief pads for wave soldering

Thermal Management

• Derate current by 0.5%/ C above 100 C
• For continuous 1A operation, maintain Tj below 125 C
• Consider using thermal vias for high-power applications

Frequently Asked Questions

Q: Can this diode handle surge currents?

A: Yes, the VS-10BQ100-M3/5BT can withstand 5A non-repetitive surge current for 8.3ms.

Q: Is this diode RoHS compliant?

A: Absolutely, the device meets all current RoHS 3.0 requirements.

Q: What's the typical reverse recovery charge?

A: Typical Qrr is 15nC at 1A forward current and 100V reverse bias.

Why Choose General Semiconductor?

With over 50 years of diode manufacturing expertise, General Semiconductor delivers:

• Industry-leading quality control (0.1% defect rate)
• Global supply chain reliability
• Comprehensive technical support
• Full traceability from wafer to final test

Ordering Information

The VS-10BQ100-M3/5BT is available in:

• Standard tape and reel (3000 pieces/reel)
• Sample quantities (minimum 10 pieces)
• Custom packaging options available

For volume pricing and lead time information, contact our authorized distributors today. Search "VS-10BQ100-M3/5BT" to find local stock or visit our website for complete datasheets and application notes.