Shopping cart

Subtotal: $0.00

1N4001GH

Taiwan Semiconductor Corporation
1N4001GH Preview
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A 50V DO-41
$0.08
Available to order
Reference Price (USD)
1+
$0.07867
500+
$0.0778833
1000+
$0.0770966
1500+
$0.0763099
2000+
$0.0755232
2500+
$0.0747365
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 1A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C

Related Products

Microchip Technology

1N6623

GeneSiC Semiconductor

GD10MPS12H

Vishay General Semiconductor - Diodes Division

BYT51G-TAP

Vishay General Semiconductor - Diodes Division

V15P12HM3/H

Diotec Semiconductor

S3GSMB-CT

Vishay General Semiconductor - Diodes Division

AR1PDHM3/84A

Nexperia USA Inc.

BAS70L/S500YL

Vishay General Semiconductor - Diodes Division

ES2D-E3/52T

Vishay General Semiconductor - Diodes Division

VSSAF3L45HM3_A/H

Top