Shopping cart

Subtotal: $0.00

1N4002B-G

Comchip Technology
1N4002B-G Preview
Comchip Technology
DIODE GEN PURP 100V 1A DO41
$0.21
Available to order
Reference Price (USD)
1+
$0.16000
10+
$0.14400
100+
$0.09400
500+
$0.04594
1,000+
$0.03132
2,500+
$0.02662
5,000+
$0.02401
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -55°C ~ 150°C

Related Products

Rohm Semiconductor

SCS220KGC17

Vishay General Semiconductor - Diodes Division

VFT1080S-E3/4W

Microchip Technology

JANTXV1N6631US/TR

Taiwan Semiconductor Corporation

LSR102 L0G

Microchip Technology

UFS540J/TR13

Rohm Semiconductor

RB168MM100TFTR

Vishay General Semiconductor - Diodes Division

VS-8ETX06STRL-M3

STMicroelectronics

STPSC12065G-TR

Top