1N5062TAP
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 800V 2A SOD57
$0.69
Available to order
Reference Price (USD)
5,000+
$0.17400
10,000+
$0.16800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic designs with 1N5062TAP Single Rectifier Diodes by Vishay General Semiconductor - Diodes Division, offering unparalleled efficiency and durability. Ideal for power supplies, inverters, and DC-DC converters, these diodes feature ultra-low leakage and high junction temperature tolerance. Their robust design ensures stable performance in extreme conditions. Whether for prototyping or mass production, Vishay General Semiconductor - Diodes Division has you covered. Request a quote or technical support today!
Specifications
- Product Status: Active
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 4 µs
- Current - Reverse Leakage @ Vr: 1 µA @ 800 V
- Capacitance @ Vr, F: 40pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: SOD-57, Axial
- Supplier Device Package: SOD-57
- Operating Temperature - Junction: -55°C ~ 175°C
Related Products
Vishay General Semiconductor - Diodes Division
VS-30EPF04-M3
Vishay General Semiconductor - Diodes Division
VS-MBRB1645TRL-M3
Panasonic Electronic Components
MA4L11100A
Microchip Technology
JANTXV1N5417
Vishay General Semiconductor - Diodes Division
USB260-M3/5BT
Vishay General Semiconductor - Diodes Division
UH4PCCHM3_A/H
GeneSiC Semiconductor
FR40M05
Micro Commercial Co
MBR1045ULPS-TP
Vishay General Semiconductor - Diodes Division
GSD2004W-G3-18
Vishay General Semiconductor - Diodes Division