Shopping cart

Subtotal: $0.00

1N5418

Microchip Technology
1N5418 Preview
Microchip Technology
DIODE GEN PURP 400V 3A B-MELF
$6.82
Available to order
Reference Price (USD)
1+
$9.40000
10+
$8.46000
100+
$6.95600
500+
$5.82800
1,000+
$5.26400
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, B
  • Supplier Device Package: B, SQ-MELF
  • Operating Temperature - Junction: -65°C ~ 175°C

Related Products

NXP Semiconductors

PMEG1020EV,115

Taiwan Semiconductor Corporation

ES1FLHRVG

Microchip Technology

1N6625US/TR

Vishay General Semiconductor - Diodes Division

VS-50WQ10FN-M3

Infineon Technologies

IDK03G65C5XTMA1

Vishay General Semiconductor - Diodes Division

BYG20G-M3/TR

Panjit International Inc.

UF1006F_T0_00001

Vishay General Semiconductor - Diodes Division

VS-25ETS08STRL-M3

Rohm Semiconductor

RB060MM-30TFTR

Micro Commercial Co

MURS860A-BP

Top