1N5822US
Microchip Technology
Microchip Technology
DIODE SCHOTTKY 40V 3A B-MELF
$77.86
Available to order
Reference Price (USD)
1+
$78.38000
10+
$73.62500
100+
$66.50000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience next-level performance with Microchip Technology's 1N5822US Single Rectifier Diodes, designed for high-power applications. These diodes provide excellent rectification efficiency, making them suitable for solar panels, electric vehicles, and UPS systems. Key features include high current density, fast recovery, and superior thermal management. Microchip Technology stands by its products with rigorous testing and quality assurance. Need assistance? Contact our sales team now!
Specifications
- Product Status: Active
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 40 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, B
- Supplier Device Package: B, SQ-MELF
- Operating Temperature - Junction: -65°C ~ 125°C
Related Products
Vishay General Semiconductor - Diodes Division
RGP30K-E3/54
Panjit International Inc.
PG102R_R2_00001
Vishay General Semiconductor - Diodes Division
RGP30G-E3/54
Microchip Technology
JANS1N5314UR-1/TR
Microchip Technology
CDLL6676
SemiQ
GP3D006A065A
Panjit International Inc.
MBR1040HEWS-AU_R1_000A1
Panjit International Inc.
MBR1560_T0_00001
Diotec Semiconductor
US3A
Microchip Technology