1N6481-E3/97
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO213AB
$0.12
Available to order
Reference Price (USD)
10,000+
$0.09121
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-quality 1N6481-E3/97 Single Rectifier Diodes from Vishay General Semiconductor - Diodes Division, designed for efficient power conversion and reliable performance. These diodes are ideal for a wide range of applications, including power supplies, converters, and inverters. With robust construction and superior thermal management, they ensure long-lasting operation under demanding conditions. Features include low forward voltage drop, high surge current capability, and excellent reverse leakage characteristics. Whether for industrial or consumer electronics, Vishay General Semiconductor - Diodes Division's 1N6481-E3/97 delivers unmatched reliability. Contact us today for more details and to request a quote!
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 400 V
- Capacitance @ Vr, F: 8pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AB, MELF (Glass)
- Supplier Device Package: DO-213AB
- Operating Temperature - Junction: -65°C ~ 175°C
Related Products
Vishay General Semiconductor - Diodes Division
SS3P6-M3/84A
Diodes Incorporated
BAS116-7-F
STMicroelectronics
STTH3010PI
Taiwan Semiconductor Corporation
RSFKL
SMC Diode Solutions
10DQ03
Diodes Incorporated
SB130-T
Yangzhou Yangjie Electronic Technology Co.,Ltd
MUR1040D-F1-0000HF
Micro Commercial Co
MURS3GB-TP
Vishay General Semiconductor - Diodes Division
MBR10H100-E3/45
Diotec Semiconductor