Shopping cart

Subtotal: $0.00

1N6625US

Microchip Technology
1N6625US Preview
Microchip Technology
DIODE GEN PURP 1.1KV 1A A-MELF
$14.46
Available to order
Reference Price (USD)
100+
$13.53200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1100 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 1100 V
  • Capacitance @ Vr, F: 10pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, A
  • Supplier Device Package: A-MELF
  • Operating Temperature - Junction: -65°C ~ 150°C

Related Products

Vishay General Semiconductor - Diodes Division

VS-25FR80

Infineon Technologies

IDH08G65C6XKSA1

Taiwan Semiconductor Corporation

TST40L120CW

Vishay General Semiconductor - Diodes Division

MMBD914-HE3-18

STMicroelectronics

STPS30SM100SG-TR

Taiwan Semiconductor Corporation

SS210L RUG

Vishay General Semiconductor - Diodes Division

SD101AWS-E3-18

Micro Commercial Co

S5KL-TP

PN Junction Semiconductor

P3D12015T2

Top