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1SS250(TE85L,F)

Toshiba Semiconductor and Storage
1SS250(TE85L,F) Preview
Toshiba Semiconductor and Storage
DIODE GEN PURP 200V 100MA SC59
$0.10
Available to order
Reference Price (USD)
3,000+
$0.09360
Exquisite packaging
Discount
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Specifications

  • Product Status: Not For New Designs
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 60 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 200 V
  • Capacitance @ Vr, F: 3pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SC-59
  • Operating Temperature - Junction: 125°C (Max)

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