1SS307E,L3F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
DIODE GEN PURP 80V 100MA SC79
$0.21
Available to order
Reference Price (USD)
8,000+
$0.02990
16,000+
$0.02600
24,000+
$0.02340
56,000+
$0.02080
200,000+
$0.01820
Exquisite packaging
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Achieve superior power conversion with 1SS307E,L3F Single Rectifier Diodes from Toshiba Semiconductor and Storage. These diodes are designed for high-performance applications, offering low forward voltage and high reverse voltage capabilities. Perfect for industrial automation, consumer electronics, and energy-efficient systems, they ensure reliable operation under varying loads. Key benefits include extended lifespan, minimal power dissipation, and compact design. Elevate your projects with Toshiba Semiconductor and Storage's cutting-edge technology. Contact us for more information!
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80 V
- Current - Average Rectified (Io): 100mA
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 nA @ 80 V
- Capacitance @ Vr, F: 6pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: SC-79
- Operating Temperature - Junction: 150°C (Max)
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