1SS403,H3F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
DIODE GEN PURP 200V 100MA USC
$0.39
Available to order
Reference Price (USD)
3,000+
$0.06210
6,000+
$0.05400
15,000+
$0.04590
30,000+
$0.04320
75,000+
$0.04050
150,000+
$0.03780
Exquisite packaging
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Optimize your circuitry with Toshiba Semiconductor and Storage's 1SS403,H3F Single Rectifier Diodes, tailored for seamless integration and high reliability. These diodes excel in applications such as voltage clamping, freewheeling, and reverse polarity protection. With features like high surge withstand capacity and low thermal resistance, they are a must-have for any electronics engineer. Toshiba Semiconductor and Storage guarantees top-tier quality and performance. Ready to take the next step? Reach out for a detailed consultation!
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 100mA
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 60 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 200 V
- Capacitance @ Vr, F: 3pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: USC
- Operating Temperature - Junction: 125°C (Max)
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