1SV279,H3F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
PB-F ESC VARICAP DIODE (HF), IR=
$0.09
Available to order
Reference Price (USD)
4,000+
$0.08600
Exquisite packaging
Discount
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Upgrade your RF designs with Toshiba Semiconductor and Storage's 1SV279,H3F Varactor Diodes, engineered for superior tuning range and minimal losses. These diodes offer fast response times, high Q-factor, and consistent performance across temperature variations, perfect for applications like tunable filters, VCOs, and automatic frequency control circuits. Trust Toshiba Semiconductor and Storage for components that enhance signal clarity and system flexibility. Ready to optimize your project? Request a quote now and experience the 1SV279,H3F difference!
Specifications
- Product Status: Active
- Capacitance @ Vr, F: 6.5pF @ 10V, 1MHz
- Capacitance Ratio: 2.5
- Capacitance Ratio Condition: C2/C10
- Voltage - Peak Reverse (Max): 15 V
- Diode Type: Single
- Q @ Vr, F: -
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: ESC
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