1SV324TPH3F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
DIODE TCXO/VCO 10V USC
$0.45
Available to order
Reference Price (USD)
3,000+
$0.09000
6,000+
$0.08500
15,000+
$0.07750
30,000+
$0.07250
75,000+
$0.07000
Exquisite packaging
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Unlock dynamic frequency control with 1SV324TPH3F Variable Capacitance Diodes by Toshiba Semiconductor and Storage. These precision components feature gold-bonded junctions for reduced losses, extended lifespan, and consistent performance in automotive infotainment, base stations, and test instrumentation. Toshiba Semiconductor and Storage's commitment to R&D ensures you stay ahead of technological curves. Need application-specific solutions? Our engineering team awaits your RFQ reach out now!
Specifications
- Product Status: Active
- Capacitance @ Vr, F: 12pF @ 4V, 1MHz
- Capacitance Ratio: 4.3
- Capacitance Ratio Condition: C1/C4
- Voltage - Peak Reverse (Max): 10 V
- Diode Type: Single
- Q @ Vr, F: -
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: USC
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