2ED2103S06FXUMA1
Infineon Technologies
Infineon Technologies
LEVEL SHIFT SOI
$1.28
Available to order
Reference Price (USD)
1+
$1.28000
500+
$1.2672
1000+
$1.2544
1500+
$1.2416
2000+
$1.2288
2500+
$1.216
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The 2ED2103S06FXUMA1 Gate Drivers by Infineon Technologies set the standard for efficiency and reliability in power management. With features like fast response times, wide voltage ranges, and compact designs, these ICs are suited for applications in data centers, consumer electronics, and telecommunications. Trust Infineon Technologies to provide cutting-edge technology tailored to your needs. Reach out to us today for detailed specifications and pricing.
Specifications
- Product Status: Active
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10V ~ 20V
- Logic Voltage - VIL, VIH: 1.1V, 1.7V
- Current - Peak Output (Source, Sink): 290mA, 700mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 650 V
- Rise / Fall Time (Typ): 70ns, 35ns
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8-69
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