2ED2104S06FXUMA1
Infineon Technologies
Infineon Technologies
LEVEL SHIFT SOI
$1.41
Available to order
Reference Price (USD)
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$1.41000
500+
$1.3959
1000+
$1.3818
1500+
$1.3677
2000+
$1.3536
2500+
$1.3395
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The 2ED2104S06FXUMA1 Gate Drivers from Infineon Technologies deliver unmatched performance for your power management needs. These ICs are packed with features like fast switching, high voltage tolerance, and minimal propagation delay, ideal for use in telecom infrastructure, renewable energy, and home automation. Infineon Technologies prides itself on providing solutions that exceed expectations. Contact us now to find out how we can help you achieve your goals.
Specifications
- Product Status: Active
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10V ~ 20V
- Logic Voltage - VIL, VIH: 1.1V, 1.7V
- Current - Peak Output (Source, Sink): 290mA, 700mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 650 V
- Rise / Fall Time (Typ): 70ns, 35ns
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8-69
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