2ED2109S06FXUMA1
Infineon Technologies
Infineon Technologies
IC HALF BRIDGE GATE DRIVER 650V
$2.27
Available to order
Reference Price (USD)
1+
$2.27000
500+
$2.2473
1000+
$2.2246
1500+
$2.2019
2000+
$2.1792
2500+
$2.1565
Exquisite packaging
Discount
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Boost your circuit performance with Infineon Technologies's 2ED2109S06FXUMA1 Gate Drivers, designed for high-efficiency power management. These ICs feature adaptive dead-time control, integrated diagnostics, and wide operating temperatures, making them suitable for automotive, industrial, and consumer applications. Infineon Technologies ensures reliability and innovation in every component. Submit your inquiry now to learn more about our offerings.
Specifications
- Product Status: Active
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10V ~ 20V
- Logic Voltage - VIL, VIH: 1.1V, 1.7V
- Current - Peak Output (Source, Sink): 290mA, 700mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 650 V
- Rise / Fall Time (Typ): 100ns, 35ns
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8-53
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