Shopping cart

Subtotal: $0.00

2ED4820EMXUMA2

Infineon Technologies
2ED4820EMXUMA2 Preview
Infineon Technologies
48 V SMART HIGH-SIDE MOSFET GATE
$6.86
Available to order
Reference Price (USD)
1+
$6.86000
500+
$6.7914
1000+
$6.7228
1500+
$6.6542
2000+
$6.5856
2500+
$6.517
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Driven Configuration: High-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 3V ~ 5.5V
  • Logic Voltage - VIL, VIH: 0.7V, 2.1V
  • Current - Peak Output (Source, Sink): 300mA, 300mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: PG-TSDSO-24

Related Products

Diodes Incorporated

DGD0280WT-7

Microchip Technology

TC4425VMF713

Microchip Technology

TC4421ESM713

Diodes Incorporated

DGD2304S8-13

Infineon Technologies

IRS2004SPBF

STMicroelectronics

L6571BD013TR

Texas Instruments

UCC27528DSDR

Microchip Technology

TC4429CAT

Infineon Technologies

AUIRS21271STR

Top