2N2857UB
Microsemi Corporation
Microsemi Corporation
RF TRANS NPN 15V 0.04A UB
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Maximize signal clarity with 2N2857UB RF BJT transistors by Microsemi Corporation. Featuring low distortion and high linearity, these components are perfect for high-sensitivity applications like medical imaging equipment and military communications. Their compact design allows for easy integration without compromising performance. Don t miss out inquire now for bulk discounts and technical specifications!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
- Gain: 21dB
- Power - Max: 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
- Current - Collector (Ic) (Max): 40mA
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB
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