2N3501
Solid State Inc.
Solid State Inc.
BI-POLAR SILICON TRANSISTOR NPN
$0.50
Available to order
Reference Price (USD)
1+
$8.23000
10+
$7.40600
25+
$6.74800
100+
$6.08970
250+
$5.59596
500+
$5.10222
1,000+
$4.44386
Exquisite packaging
Discount
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Simplify your RF design challenges with 2N3501 from Solid State Inc.. These BJT transistors offer consistent hFE matching and low saturation voltage, essential for push-pull configurations and mixer circuits. Serving industries from marine navigation to renewable energy. Connect with our team we provide end-to-end support from selection to delivery!
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 150V
- Frequency - Transition: 150MHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 1W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Current - Collector (Ic) (Max): 300mA
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39
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