2N5362
Harris Corporation
Harris Corporation
N - CHANNEL JFET
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Achieve new performance benchmarks with Harris Corporation's 2N5362 JFET transistors, specifically engineered for phase-sensitive detection circuits. The unique triple-diffused structure minimizes 1/f noise while delivering 0.1dB gain flatness across bandwidths to 100MHz. Medical imaging systems and lock-in amplifiers benefit from these precision characteristics. Check stock availability through our real-time inventory system or ask about custom testing protocols for mission-critical deployments.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 40 V
- Drain to Source Voltage (Vdss): 40 V
- Current - Drain (Idss) @ Vds (Vgs=0): 4 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 2 V @ 100 nA
- Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 15V
- Resistance - RDS(On): -
- Power - Max: 300 mW
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-206AF, TO-72-4 Metal Can
- Supplier Device Package: TO-72-4
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