2N5657G
onsemi
onsemi
TRANS NPN 350V 0.5A TO126
$0.26
Available to order
Reference Price (USD)
1+
$0.62000
10+
$0.53400
100+
$0.39870
500+
$0.31324
1,000+
$0.24205
Exquisite packaging
Discount
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Experience superior performance with 2N5657G from onsemi, a key player in Discrete Semiconductor Products. Our Transistors - Bipolar (BJT) - Single provide high gain and low power consumption, ideal for battery-operated devices. Versatile and dependable, 2N5657G is suited for a variety of electronic applications. Don't wait reach out now for more information and pricing options.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 350 V
- Vce Saturation (Max) @ Ib, Ic: 10V @ 100mA, 500mA
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 10V
- Power - Max: 20 W
- Frequency - Transition: 10MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126
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