2N7002P,235
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 60V 360MA TO236AB
$0.27
Available to order
Reference Price (USD)
10,000+
$0.02818
30,000+
$0.02565
50,000+
$0.02312
100,000+
$0.02185
250,000+
$0.01970
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of 2N7002P,235, a premium Transistors - FETs, MOSFETs - Single from Nexperia USA Inc.. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, 2N7002P,235 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
onsemi
NTMFS5C430NLT1G
Rohm Semiconductor
SCT4036KEHRC11
Rohm Semiconductor
RQ3E110AJTB
Infineon Technologies
IPA50R350CPXKSA1
Infineon Technologies
IPB080N03LGATMA1
Alpha & Omega Semiconductor Inc.
AON1605
onsemi
NTJS4405NT1G
onsemi
NVMFS5C450NLAFT1G
Rohm Semiconductor
RQ6E085BNTCR
Renesas Electronics America Inc