2PB709ASW,115
NXP USA Inc.
NXP USA Inc.
NOW NEXPERIA 2PB709ASW - SMALL S
$0.02
Available to order
Reference Price (USD)
3,000+
$0.03450
Exquisite packaging
Discount
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Upgrade your electronic projects with 2PB709ASW,115 by NXP USA Inc., a top choice in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single offer superior performance with features like low noise and high gain, making them suitable for a wide range of applications. Whether you're working on consumer electronics or industrial systems, 2PB709ASW,115 provides the reliability you need. Ready to enhance your designs? Submit an inquiry now and experience the NXP USA Inc. difference.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 290 @ 2mA, 10V
- Power - Max: 200 mW
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
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