2PD2150,115
NXP Semiconductors
NXP Semiconductors
NEXPERIA 2PD2150 - POWER BIPOLAR
$0.07
Available to order
Reference Price (USD)
1,000+
$0.12600
2,000+
$0.11480
5,000+
$0.10920
10,000+
$0.10080
25,000+
$0.09520
50,000+
$0.09240
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your designs with 2PD2150,115 by NXP Semiconductors, a leader in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for precision and reliability, offering excellent linearity and low distortion. Whether for RF applications or general-purpose switching, 2PD2150,115 is the perfect fit. Contact us today to learn more and place your order with NXP Semiconductors.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 20 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 2V
- Power - Max: 2 W
- Frequency - Transition: 220MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89
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