2SA1182-GR,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PNP 30V 0.5A SMINI
$0.33
Available to order
Reference Price (USD)
1+
$0.33000
500+
$0.3267
1000+
$0.3234
1500+
$0.3201
2000+
$0.3168
2500+
$0.3135
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience superior performance with 2SA1182-GR,LF from Toshiba Semiconductor and Storage, a key player in Discrete Semiconductor Products. Our Transistors - Bipolar (BJT) - Single provide high gain and low power consumption, ideal for battery-operated devices. Versatile and dependable, 2SA1182-GR,LF is suited for a variety of electronic applications. Don't wait reach out now for more information and pricing options.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
- Power - Max: 150 mW
- Frequency - Transition: 200MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
Related Products
Microchip Technology
JANTX2N5154L
Panjit International Inc.
BC807-40_R1_00001
Diodes Incorporated
DSS5240T-7
NTE Electronics, Inc
NTE159MCP
Microchip Technology
JANS2N5154U3/TR
NTE Electronics, Inc
NTE2364
Diodes Incorporated
ZTX795A
onsemi
NST856BF3T5G
Solid State Inc.
2N5193
Rohm Semiconductor