2SA1312GRTE85LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PNP 120V 0.1A SMINI
$0.06
Available to order
Reference Price (USD)
3,000+
$0.06300
Exquisite packaging
Discount
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Optimize your designs with 2SA1312GRTE85LF by Toshiba Semiconductor and Storage, a leader in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for precision and reliability, offering excellent linearity and low distortion. Whether for RF applications or general-purpose switching, 2SA1312GRTE85LF is the perfect fit. Contact us today to learn more and place your order with Toshiba Semiconductor and Storage.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 120 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 150 mW
- Frequency - Transition: 100MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
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