2SA1669-TB-E
Sanyo
Sanyo
PNP EPITAXIAL PLANAR SILICON
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Discover high-performance 2SA1669-TB-E RF Bipolar Transistors from Sanyo, designed for superior signal amplification in demanding applications. These transistors feature excellent high-frequency response, low noise, and reliable performance, making them ideal for RF and microwave circuits. Commonly used in communication systems, radar, and wireless devices, our BJT-RF transistors ensure stable operation under varying conditions. Contact us today for pricing and availability let our experts help you find the perfect solution for your RF needs!
Specifications
- Product Status: Active
- Transistor Type: PNP
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: 3GHz
- Noise Figure (dB Typ @ f): 2dB @ 900MHz
- Gain: 5dB
- Power - Max: 250mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: 3-CP
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