2SA1955FVATPL3Z
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PNP 12V 0.4A CST3
$0.20
Available to order
Reference Price (USD)
8,000+
$0.06757
Exquisite packaging
Discount
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Optimize your designs with 2SA1955FVATPL3Z by Toshiba Semiconductor and Storage, a leader in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for precision and reliability, offering excellent linearity and low distortion. Whether for RF applications or general-purpose switching, 2SA1955FVATPL3Z is the perfect fit. Contact us today to learn more and place your order with Toshiba Semiconductor and Storage.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 400 mA
- Voltage - Collector Emitter Breakdown (Max): 12 V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
- Power - Max: 100 mW
- Frequency - Transition: 130MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: CST3
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