2SA1977-T1B-A
Renesas Electronics America Inc
Renesas Electronics America Inc
PNP TRANSISTOR
$1.83
Available to order
Reference Price (USD)
1+
$1.83000
500+
$1.8117
1000+
$1.7934
1500+
$1.7751
2000+
$1.7568
2500+
$1.7385
Exquisite packaging
Discount
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Discover high-performance 2SA1977-T1B-A RF Bipolar Transistors from Renesas Electronics America Inc, designed for superior signal amplification in demanding applications. These transistors feature excellent high-frequency response, low noise, and reliable performance, making them ideal for RF and microwave circuits. Commonly used in communication systems, radar, and wireless devices, our BJT-RF transistors ensure stable operation under varying conditions. Contact us today for pricing and availability let our experts help you find the perfect solution for your RF needs!
Specifications
- Product Status: Obsolete
- Transistor Type: PNP
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 8.5GHz
- Noise Figure (dB Typ @ f): 1.5dB @ 1GHz
- Gain: 12dB
- Power - Max: 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 8V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT23-3 (TO-236)
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