2SC1213AB-E
Renesas Electronics America Inc
Renesas Electronics America Inc
TRANS NPN 50V 0.5A TO92
$0.24
Available to order
Reference Price (USD)
1+
$0.24000
500+
$0.2376
1000+
$0.2352
1500+
$0.2328
2000+
$0.2304
2500+
$0.228
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your designs with 2SC1213AB-E by Renesas Electronics America Inc, a leader in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for precision and reliability, offering excellent linearity and low distortion. Whether for RF applications or general-purpose switching, 2SC1213AB-E is the perfect fit. Contact us today to learn more and place your order with Renesas Electronics America Inc.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 15mA, 150mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 3V
- Power - Max: 400 mW
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92
Related Products
NXP Semiconductors
PDTC143TT,215
onsemi
SMMBT2222ALT1G
onsemi
MPSW51G
onsemi
BC327-25RL1G
onsemi
2SB986T
onsemi
BCX70H-ON
Microchip Technology
JANS2N3700
onsemi
2SC6017-TL-E
onsemi
2SD1193
onsemi