2SC2839E-SPA-AC
onsemi
onsemi
NPN EPITAXIAL PLANAR SILICON
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Achieve peak RF performance with 2SC2839E-SPA-AC transistors by onsemi. These BJT components combine high breakdown voltage with superior thermal management, catering to power amplifier stages and frequency multipliers. Trusted in defense and commercial sectors alike. Take the next step inquire about customization options and lead times!
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 20V
- Frequency - Transition: 320MHz
- Noise Figure (dB Typ @ f): 3dB @ 100MHz
- Gain: 25dB
- Power - Max: 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1mA, 6V
- Current - Collector (Ic) (Max): 30mA
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: 3-SIP
- Supplier Device Package: 3-SPA
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