2SC3646S-P-TD-E
onsemi
onsemi
TRANS NPN 100V 1A
$0.25
Available to order
Reference Price (USD)
1,000+
$0.29988
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-quality 2SC3646S-P-TD-E from onsemi, a leading solution in the Discrete Semiconductor Products category. Our Transistors - Bipolar (BJT) - Single are designed for reliability and performance, making them ideal for various electronic applications. These transistors feature excellent amplification and switching capabilities, ensuring optimal performance in your circuits. Perfect for use in amplifiers, switches, and other electronic devices, 2SC3646S-P-TD-E delivers consistent results. Interested in learning more? Contact us today for a quote and let onsemi meet your semiconductor needs.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
- Power - Max: 500 mW
- Frequency - Transition: 120MHz
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PCP
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