2SC3651-TD-E
Fairchild Semiconductor
Fairchild Semiconductor
2SC3651 - NPN EPITAXIAL PLANAR S
$0.18
Available to order
Reference Price (USD)
1+
$0.18000
500+
$0.1782
1000+
$0.1764
1500+
$0.1746
2000+
$0.1728
2500+
$0.171
Exquisite packaging
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Maximize efficiency with Fairchild Semiconductor's 2SC3651-TD-E BJT Arrays, engineered for precision and reliability. These arrays boast low power consumption, high current capacity, and excellent thermal characteristics, making them a top choice for power supply and signal processing circuits. Ideal for telecommunications, robotics, and IoT devices. Don't miss out reach out to our sales team for more details and special offers!
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 5V
- Power - Max: 500mW
- Frequency - Transition: 150MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PCP
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