2SC4213BTE85LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN 20V 0.3A USM
$0.46
Available to order
Reference Price (USD)
3,000+
$0.08400
6,000+
$0.07560
15,000+
$0.06720
30,000+
$0.06300
75,000+
$0.05600
Exquisite packaging
Discount
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Upgrade your electronic projects with 2SC4213BTE85LF by Toshiba Semiconductor and Storage, a top choice in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single offer superior performance with features like low noise and high gain, making them suitable for a wide range of applications. Whether you're working on consumer electronics or industrial systems, 2SC4213BTE85LF provides the reliability you need. Ready to enhance your designs? Submit an inquiry now and experience the Toshiba Semiconductor and Storage difference.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 300 mA
- Voltage - Collector Emitter Breakdown (Max): 20 V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V
- Power - Max: 100 mW
- Frequency - Transition: 30MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: USM
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