2SC5065-O(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
RF TRANS NPN 12V 7GHZ USM
$0.00
Available to order
Reference Price (USD)
3,000+
$0.09800
6,000+
$0.09310
15,000+
$0.08925
30,000+
$0.08680
75,000+
$0.08400
Exquisite packaging
Discount
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Designed for the future, Toshiba Semiconductor and Storage's 2SC5065-O(TE85L,F) RF BJT transistors deliver cutting-edge technology in a proven package. Features include gold metallization for reliable contacts and TO-39 enclosures for durability. Perfect for phased-array antennas and microwave links. Your innovation starts here reach out for expert consultation today!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 7GHz
- Noise Figure (dB Typ @ f): 1dB @ 500MHz
- Gain: -
- Power - Max: 100mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Current - Collector (Ic) (Max): 30mA
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70
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