2SC5065-Y(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
RF TRANS NPN 12V 7GHZ USM
$0.42
Available to order
Reference Price (USD)
3,000+
$0.11781
6,000+
$0.11067
15,000+
$0.10353
30,000+
$0.09520
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Simplify your RF design challenges with 2SC5065-Y(TE85L,F) from Toshiba Semiconductor and Storage. These BJT transistors offer consistent hFE matching and low saturation voltage, essential for push-pull configurations and mixer circuits. Serving industries from marine navigation to renewable energy. Connect with our team we provide end-to-end support from selection to delivery!
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 7GHz
- Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
- Gain: 12dB ~ 17dB
- Power - Max: 100mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
- Current - Collector (Ic) (Max): 30mA
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70
Related Products
Renesas
NE85634-T1-RE-A
Renesas Electronics America Inc
2SC5751-T2-A
Solid State Inc.
2N3500
Renesas Electronics America Inc
2SC4703-T1-AZ
Infineon Technologies
BFS17WH6327XTSA1
Infineon Technologies
BFR35APE6327HTSA1
MACOM Technology Solutions
PH3135-20M
Infineon Technologies
BFP640E6327BTSA1
Infineon Technologies
BFR193FH6327XTSA1
NTE Electronics, Inc