2SC5359-O(Q)
Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage
TRANS NPN 230V 15A TO3P
$2.57
Available to order
Reference Price (USD)
1+
$2.57340
500+
$2.547666
1000+
$2.521932
1500+
$2.496198
2000+
$2.470464
2500+
$2.44473
Exquisite packaging
Discount
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Optimize your designs with 2SC5359-O(Q) by Toshiba Semiconductor and Storage, a leader in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for precision and reliability, offering excellent linearity and low distortion. Whether for RF applications or general-purpose switching, 2SC5359-O(Q) is the perfect fit. Contact us today to learn more and place your order with Toshiba Semiconductor and Storage.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 15 A
- Voltage - Collector Emitter Breakdown (Max): 230 V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
- Current - Collector Cutoff (Max): 5µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
- Power - Max: 180 W
- Frequency - Transition: 30MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3PL
- Supplier Device Package: TO-3P(L)