2SC5508-T2-A
Renesas Electronics America Inc
Renesas Electronics America Inc
RF 0.035A, NPN
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Engineered for excellence, Renesas Electronics America Inc's 2SC5508-T2-A transistors redefine RF performance in the Bipolar (BJT) category. Ideal for VHF/UHF systems, these devices provide exceptional gain-bandwidth product and phase stability. Applications span from broadcast transmitters to automotive radar. Partner with us for quality components contact our sales team for personalized assistance!
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 3.3V
- Frequency - Transition: 25GHz
- Noise Figure (dB Typ @ f): 1.1dB @ 2GHz
- Gain: 17dB
- Power - Max: 115mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 2V
- Current - Collector (Ic) (Max): 35mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-343F
- Supplier Device Package: SOT-343F
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