2SC5551AE-TD-E
onsemi
onsemi
RF TRANS NPN 30V 3.5GHZ PCP
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Upgrade your RF designs with onsemi's 2SC5551AE-TD-E Bipolar Junction Transistors (BJT), engineered for precision and efficiency in high-frequency applications. Key features include high gain, fast switching, and thermal stability, suitable for amplifiers, oscillators, and RF modules. Whether for industrial or consumer electronics, these transistors deliver consistent performance. Interested? Submit an inquiry now to learn how 2SC5551AE-TD-E can enhance your projects!
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 30V
- Frequency - Transition: 3.5GHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 1.3W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V
- Current - Collector (Ic) (Max): 300mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PCP
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