2SD1223(TE16L1,NQ)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN DARL 80V 4A PW-MOLD
$0.40
Available to order
Reference Price (USD)
1+
$0.39750
500+
$0.393525
1000+
$0.38955
1500+
$0.385575
2000+
$0.3816
2500+
$0.377625
Exquisite packaging
Discount
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Optimize your designs with 2SD1223(TE16L1,NQ) by Toshiba Semiconductor and Storage, a leader in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for precision and reliability, offering excellent linearity and low distortion. Whether for RF applications or general-purpose switching, 2SD1223(TE16L1,NQ) is the perfect fit. Contact us today to learn more and place your order with Toshiba Semiconductor and Storage.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 6mA, 3A
- Current - Collector Cutoff (Max): 20µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 2V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PW-MOLD
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