2SK208-GR(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
JFET N-CH 50V SC59
$0.52
Available to order
Reference Price (USD)
3,000+
$0.13365
6,000+
$0.12555
15,000+
$0.11745
30,000+
$0.11340
Exquisite packaging
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Discover high-performance 2SK208-GR(TE85L,F) JFET transistors from Toshiba Semiconductor and Storage, designed for precision signal processing and low-noise applications. These transistors feature excellent gain consistency, low input capacitance, and superior thermal stability, making them ideal for audio amplifiers, instrumentation circuits, and RF designs. Whether you're developing professional audio equipment or sensitive measurement devices, Toshiba Semiconductor and Storage's JFETs deliver reliable performance. Contact us today for datasheets and pricing our team is ready to assist with your project requirements.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 50 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 2.6 mA @ 10 V
- Current Drain (Id) - Max: 6.5 mA
- Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA
- Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 100 mW
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SC-59
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