2SK2394-6-TB-E
onsemi
onsemi
JFET N-CH 50MA 200MW 3CP
$0.64
Available to order
Reference Price (USD)
3,000+
$0.20460
6,000+
$0.19140
15,000+
$0.17820
30,000+
$0.16896
Exquisite packaging
Discount
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Achieve new performance benchmarks with onsemi's 2SK2394-6-TB-E JFET transistors, specifically engineered for phase-sensitive detection circuits. The unique triple-diffused structure minimizes 1/f noise while delivering 0.1dB gain flatness across bandwidths to 100MHz. Medical imaging systems and lock-in amplifiers benefit from these precision characteristics. Check stock availability through our real-time inventory system or ask about custom testing protocols for mission-critical deployments.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): 15 V
- Current - Drain (Idss) @ Vds (Vgs=0): 10 mA @ 5 V
- Current Drain (Id) - Max: 50 mA
- Voltage - Cutoff (VGS off) @ Id: 300 mV @ 100 µA
- Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
- Resistance - RDS(On): -
- Power - Max: 200 mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: 3-CP
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