2SK3666-3-TB-E
onsemi
onsemi
JFET N-CH 10MA 200MW 3CP
$0.06
Available to order
Reference Price (USD)
3,000+
$0.09614
6,000+
$0.08653
15,000+
$0.07691
30,000+
$0.07211
75,000+
$0.06393
150,000+
$0.06153
Exquisite packaging
Discount
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Discover high-performance 2SK3666-3-TB-E JFET transistors from onsemi, designed for precision signal processing and low-noise applications. These transistors feature excellent gain consistency, low input capacitance, and superior thermal stability, making them ideal for audio amplifiers, instrumentation circuits, and RF designs. Whether you're developing professional audio equipment or sensitive measurement devices, onsemi's JFETs deliver reliable performance. Contact us today for datasheets and pricing our team is ready to assist with your project requirements.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): 30 V
- Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
- Current Drain (Id) - Max: 10 mA
- Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
- Resistance - RDS(On): 200 Ohms
- Power - Max: 200 mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMCP
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