2SK880GRTE85LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
JFET N-CH 50V 0.1W USM
$0.62
Available to order
Reference Price (USD)
3,000+
$0.19840
6,000+
$0.18560
15,000+
$0.17920
Exquisite packaging
Discount
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Discover high-performance 2SK880GRTE85LF JFET transistors from Toshiba Semiconductor and Storage, designed for precision signal processing and low-noise applications. These transistors feature excellent gain consistency, low input capacitance, and superior thermal stability, making them ideal for audio amplifiers, instrumentation circuits, and RF designs. Whether you're developing professional audio equipment or sensitive measurement devices, Toshiba Semiconductor and Storage's JFETs deliver reliable performance. Contact us today for datasheets and pricing our team is ready to assist with your project requirements.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 50 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 2.6 mA @ 10 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
- Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 100 mW
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70
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